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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD970 DESCRIPTION With TO-220 package High DC current gain DARLINGTON Complement to type 2SB791 APPLICATIONS For medium speed and power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 120 Collector-base voltage Open emitter Collector-emitter voltage Open base 120 7 8 12 TC=25ae 40 150 -55~150 Emitter-base voltage Collector current Collector current-peak Collector dissipation Junction temperature Storage temperature Open collector UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current CONDITIONS IC=25mA ;RBE=0 IE=50mA ; IC=0 IC=4A ;IB=8mA IC=8A ;IB=80mA IC=4A ;IB=8mA IC=8A ;IB=80mA VCB=120V; IE=0 VCE=100V; RBE= IC=4A ; VCE=3V MIN 120 7 TYP. 2SD970 SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE MAX UNIT V V 1.5 3.0 2.0 3.5 100 10 |I |I V V V V A A Switching times ton ts tf TOR NDU ICO E SEM ANG INCH DC current gain 1000 Turn-on time Storage time 0.4 IC=4A ;IB1=-IB2=8mA 5.4 Fall time 1.1 20000 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD970 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
Price & Availability of 2SD970
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